Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 19, 2008
Patent Application Number
11475016
Date Filed
June 27, 2006
Patent Primary Examiner
Patent abstract
A p-n junction interface 3 is formed between an n-type ZnTe1-xOx (0.5≦x≦1) layer 8 and a p-type ZnTe1-xOx (0≦x<0.5) layer 7, and the n-type ZnTeO layer 8 and/or p-type ZnTeO layer 7 are formed by thermal oxidation of the main surficial side of a p-type ZnTe wafer. This is successful in providing a Zn-base semiconductor light emitting device and a method of fabricating thereof possibly be improved in the emission efficiency at a light emitting layer composed of a Zn-base semiconductor light emitting device.
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