Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jun Seok Lee0
Date of Patent
February 19, 2008
0Patent Application Number
110244350
Date Filed
December 30, 2004
0Patent Primary Examiner
Patent abstract
The present invention provides a phase shift mask and fabricating method thereof, by which a critical dimension of a semiconductor pattern can be accurately formed in a manner of compensating a boundary step difference between an active area and an insulating layer. The present invention includes a transparent substrate and at least two halftone layers on the transparent substrate to have light transmittance lower than that of the transparent substrate, each comprising front and rear parts differing in thickness from each other.
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