Patent attributes
A source of a driving transistor for driving an organic EL element functions as a first capacitance electrode layer. A second capacitance electrode layer is formed on the source through a gate insulating film of the driving transistor. The second capacitance electrode layer is formed with the same layer and by the same process as the gate electrode. A third capacitance electrode layer is formed extending over the second capacitance electrode layer through the interlayer insulating film. The third capacitance electrode layer is formed with the same layer as the drain electrode and the drain signal line. The third capacitance electrode layer is connected to the source of the driving transistor. The forming area of the storage capacitance element for holding the video signal supplied to the gate of the driving transistor can be thus reduced, improving display quality as well as extending life span of the organic El element.
