US Patent 7323751 Thin film resistor integration in a dual damascene structure

Patent 7323751 was granted and assigned to Texas Instruments on January, 2008 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Texas Instruments

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7323751

Date of Patent

January 29, 2008

Patent Application Number

10453701

Date Filed

June 3, 2003

Patent Primary Examiner

‌

Edward Wojciechowicz

Patent abstract

A thin film resistor and at least one metal interconnect are formed in an integrated circuit. A first dielectric layer is formed over a metal interconnect layer. A thin film resistor is formed on the first dielectric layer and a second dielectric layer formed over the thin film resistor. Thin film resistor vias and the at least one trench are formed concurrently in the second dielectric layer. A trench via is then formed in the at least one trench. The trench via, the at least one trench and the thin film resistor vias are filled with a contact material layer to form thin film resistor contacts and at least one conductive line coupled to the metal interconnect layer.