US Patent 7323749 Semiconductor device comprising an integrated circuit

A semiconductor device with a plurality of passive components (7,7a,8,8a) comprising a bottom substrate (1), a buried oxide layer (2) on a portion of the top surface of the bottom substrate (1), an dielectric intermediate insulating layer (3) on a portion of the buried oxide layer (2), a dielectric top insulating layer (4), and at least one implanted passive component (7a,8a) of a semiconductor material implanted under the buried oxide layer (2) within the top surface portion of the bottom substrate (1), the implanted semiconductor material having a material polarity being opposite to the bottom substrate polarity. When the implanted passive component (7a) is an AC decoupling capacitor (7a), the bottom and side portions of the implanted semiconductor material are surrounded by a depletion layer (7b) of a semiconductor material implanted between said bottom substrate (1) and said implanted semiconductor material.