US Patent 7323692 Flat-panel detector with avalanche gain

The present invention is an indirect AMFPI wherein a phosphor such as a structured cesium iodide (CsI) is used to convert x-ray energy to optical photons or a charge, which is then detected by a two-dimensional array of either thin-film transistors (TFTs) such as an amorphous a-Se TFTs or a photodiode array. A scanning control circuit generates pulses to turn on the TFTs one row at a time, and thus the charge in the individual arrays is transferred from the TFT to one or more external charge-sensitive amplifiers. The charge-sensitive amplifiers are shared by all the pixels in the same column. The two-dimensional array can be read in real time.