Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 22, 2008
Patent Application Number
11332153
Date Filed
January 17, 2006
Patent Primary Examiner
Patent abstract
A device including a trench capacitor formed in a semiconductor substrate for configuring a DRAM cell together with a cell transistor is provided. The device also includes a cell transistor including diffused regions formed in a surface of a semiconductor substrate; a trench capacitor formed in said semiconductor substrate for configuring a DRAM cell together with said cell transistor; a buried strap formed in said semiconductor substrate to connect said diffused region to said trench capacitor; and a collar insulation film formed on sides of said buried strap.
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