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US Patent 7317583 High numerical aperture projection system and method for microlithography

Patent 7317583 was granted and assigned to ASML Holding on January, 2008 by the United States Patent and Trademark Office.

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Patent
Patent
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Patent attributes

Current Assignee
ASML Holding
ASML Holding
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
73175830
Patent Inventor Names
Mark L Oskotsky0
Stanislav Smirnov0
Date of Patent
January 8, 2008
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Patent Application Number
102244850
Date Filed
August 21, 2002
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Patent Primary Examiner
‌
Joshua L. Pritchett
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Patent abstract

The present invention relates to a high numerical aperture exposure system having a wafer. The exposure system in the present invention includes a beam-splitter, a reticle, a reticle optical group, where the reticle optical group is placed between the reticle and the beam-splitter, a concave mirror, a concave mirror optical group, where the concave mirror optical group is placed between the concave mirror and the beam-splitter, a fold mirror, where the fold mirror is placed between the beam-splitter and the wafer, and a wafer optical group, where the wafer optical group is placed between the beam-splitter and the wafer. In the present invention, a beam of light is directed through the reticle and the reticle optical group to the beam-splitter, then it is reflected by the beam-splitter onto the concave mirror. Concave mirror reflects the light onto the fold mirror through the beam-splitter. Fold mirror reflects the light onto the wafer through the wafer optical group. The present invention forms an intermediate image between the fold mirror and the wafer optical group. Furthermore, in an embodiment an aperture stop can be placed between the concave mirror optical group and the concave mirror.

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