US Patent 7310862 Method for manufacturing a piezoelectric device

Patent 7310862 was granted and assigned to Seiko Epson on December, 2007 by the United States Patent and Trademark Office.

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Patent Inventor Names

Hiromu Miyazawa0

Setsuya Iwashita0

Takamitsu Higuchi0

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Patent abstract

A method is provided for effectively manufacturing a piezoelectric device equipped with a piezoelectric film with a crystal orientation that is aligned in a desired direction. An interlayer which partially has a layer formed by an ion beam assisted laser ablation method while controlling a temperature rise accompanied by an ion beam irradiation by a cooling device and is bi-axially oriented as a whole, is formed on a surface of a substrate. A lower electrode is formed on the interlayer. A piezoelectric film is formed on the lower electrode. An upper electrode is formed on the piezoelectric film. The lower electrode and the piezoelectric film are formed by epitaxial growth.

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https://pdfpiw.uspto.gov/.piw?Docid=073108620

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edited on 20 May, 2023