Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sung-hoan Kim0
Tae-jung Lee0
Dong-ryul Chang0
Soo-cheol Lee0
Date of Patent
December 4, 2007
Patent Application Number
11429370
Date Filed
May 5, 2006
Patent Primary Examiner
Patent abstract
Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interlayer dielectric layer formed on the first conductive layer pattern, a second conductive layer pattern formed on the interlayer dielectric layer, and a first vacuum ultraviolet (VUV) blocking layer which blocks a VUV ray radiated to the semiconductor substrate.
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