US Patent 7303786 Method of forming a polysilicon layer

Patent 7303786 was granted and assigned to AU Optronics on December, 2007 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

AU Optronics

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7303786

Date of Patent

December 4, 2007

Patent Application Number

10754406

Date Filed

January 9, 2004

Patent Primary Examiner

‌

William Phillip Fletcher, III

Patent abstract

In a method of forming a polysilicon layer on a substrate, a first embodiment comprises: doping inert gas into the substrate to form a plurality of pores in the substrate; depositing a buffer later on the substrate; depositing an amorphous silicon layer on the buffer layer; and heating the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer. A second embodiment comprises: depositing a first buffer layer on a substrate; doping inert gas into the first buffer layer to form a plurality of pores in the first buffer layer; depositing a second buffer layer on the first buffer layer; depositing an amorphous silicon layer on the second buffer layer; and heating the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer.