US Patent 7301190 Structures and methods to enhance copper metallization

Patent 7301190 was granted and assigned to Micron Technology on November, 2007 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Micron Technology

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

73011900

Patent Inventor Names

Paul A. Farrar0

Date of Patent

November 27, 2007

Patent Application Number

101959650

Date Filed

July 16, 2002

Patent Primary Examiner

‌

Thao P. Le

Patent abstract

Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a metallization layer. The insulator includes a polymer or an insulating oxide compound. And, the inhibiting layer has a compound formed from a reaction between the polymer or insulating oxide compound and a transition metal, a representative metal, or a metalloid.