Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chen-Hsiung Yang0
Date of Patent
November 20, 2007
0Patent Application Number
111609750
Date Filed
July 18, 2005
0Patent Primary Examiner
Patent abstract
First, a device wafer having a substrate layer and a device layer is provided. Then, a first mask pattern is utilized to remove the device layer uncovered by the first mask pattern. Subsequently, a medium layer is formed on the surface of the device wafer, and the medium layer is then bonded to a carrier wafer. Thereafter, a second mask pattern is utilized to remove the substrate layer uncovered by the second mask pattern. Finally, the medium layer is separated from the carrier wafer, the substrate layer is bonded to an extendable film, and the medium layer is then removed.
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