US Patent 7291881 Bit line structure and method of fabrication

Patent 7291881 was granted and assigned to Infineon Technologies on November, 2007 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Infineon Technologies

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7291881

Date of Patent

November 6, 2007

Patent Application Number

11592844

Date Filed

November 2, 2006

Patent Citations Received

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US Patent 11877440 Bit line structure including ohmic contact and forming method thereof

Patent Primary Examiner

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Trung Dang

Patent abstract

The invention relates to a bit line structure having a surface bit line (DLx) and a buried bit line (SLx), the buried bit line (SLx) being formed in a trench with a trench insulation layer (6) and being connected to doping regions (10) with which contact is to be made via a covering connecting layer (12) and a self-aligning terminal layer (13) in an upper partial region of the trench.