Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 30, 2007
Patent Application Number
11472384
Date Filed
June 22, 2006
Patent Primary Examiner
Patent abstract
In a method for manufacturing a semiconductor device wherein via holes are formed in an SiC substrate, a stacked film consisting of a Ti film and an Au film is formed on the back face of the SiC substrate, and a Pd film is formed thereon. Then, an Ni film is formed by non-electrolytic plating, using the Pd film as a catalyst. Thereafter, via holes penetrating through the SiC substrate are formed by etching, using the Ni film as a mask.
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