US Patent 7288224 Method of producing a sputtering target

A sputtering target contains a target material including as constituent elements Ag, In, Te and Sb with the respective atomic percents (atom. %) of α, β, γ and δ thereof being in the relationship of 0.5≦α<8, 5≦γ≦23, 17≦γ≦38, 32≦δ≦73, α≦γ, and α+β+γ+δ=100, and a method of producing the above sputtering target is provided.