Disclosed is a semiconductor memory device which includes a sense amplifier, arranged between a first mat and a second mat, switches for controlling the connection between first and second bit lines of each of the first and second mats on one hand and the sense amplifier on the other, and a control unit for exercising control so that, when an input test mode signal indicates a test mode, both the switch associated with the selected mat and the switch associated with the non-selected mat will be turned on.