Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 23, 2007
Patent Application Number
11638551
Date Filed
December 14, 2006
Patent Primary Examiner
Patent abstract
A method of producing a semiconductor device includes the steps of: preparing a double SOI substrate, forming a deep trench, filling the deep trench, forming an opening, forming a cavity, depositing a polycrystalline silicon layer, and forming a bipolar transistor.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
