Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yi Ying Liao0
Wen Jer Tsai0
Chih Chieh Yeh0
Date of Patent
September 18, 2007
Patent Application Number
11299310
Date Filed
December 9, 2005
Patent Primary Examiner
Patent abstract
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
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