Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hun-Jan Tao0
Zhong Tang Xuan0
Chang-Yun Chang0
Sheng-Da Liu0
Jyu-Horng Shieh0
Ju-Wang Hsu0
Date of Patent
September 18, 2007
Patent Application Number
11057423
Date Filed
February 14, 2005
Patent Primary Examiner
Patent abstract
A multiple gate region FET device for forming up to 6 FET devices and method for forming the same, the device including a multiple fin shaped structure comprising a semiconductor material disposed on a substrate; said multiple fin shaped structure comprising substantially parallel spaced apart sidewall portions, each of said sidewall portions comprising major inner and outer surfaces and an upper surface; wherein, each of said surfaces comprises a surface for forming an overlying field effect transistor (FET).
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