Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ki-Won Nam0
Date of Patent
September 4, 2007
0Patent Application Number
110197450
Date Filed
December 20, 2004
0Patent Primary Examiner
Patent abstract
The present invention relates to a method for fabricating a semiconductor device with gate spacers. The method includes the steps of: forming a plurality of gate structures on a substrate; forming an insulation layer on the gate structures and the substrate; and etching the insulation layer to form gate spacers on sidewalls of the gate structures, wherein the gate spacers have top corners sloped by employing two different etch recipes providing different ranges of a pressure and a gas flow.
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