US Patent 7259995 Memory device

A method of stabilizing a memory device comprises trapping a plurality of electric charges in a charge trapping layer of the memory device. The charge trapping layer is positioned between a transistor control gate and a transistor channel region. The method further comprises applying a negative voltage bias to the transistor control gate. In another embodiment, the method further comprises performing a baking process on the memory device. The method further comprises performing a memory operation on the memory device.