Patent attributes
There is provided a semiconductor device that comprises a first impurity diffusion region formed on a silicon substrate (semiconductor substrate), a first interlayer insulating film (first insulating film) formed over the silicon substrate, a first hole formed in the first interlayer insulating film, a first conductive plug formed in the first hole and connected electrically to the first impurity diffusion region and having an end portion protruded from an upper surface of the first interlayer insulating film, a conductive oxygen barrier film formed to wrap the end portion of the first conductive plug, and a capacitor formed by laminating a capacitor lower electrode, a capacitor dielectric film, and a capacitor upper electrode sequentially on the conductive oxygen barrier film.
