US Patent 7259067 Method for manufacturing flash memory device

The present invention relates to a method for manufacturing a flash memory device. A plurality of conductive layers and dielectric layers are etched in a single etch apparatus, thus forming a control gate and a floating gate. In a gate formation process in which a thickness of a floating gate is over 1500 Å, problems in short process time and short mass production margin in an existing process can be solved while completely stripping a dielectric layer fence.