Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Apostolos T. Voutsas0
Mark A. Crowder0
Masao Moriguchi0
Date of Patent
August 14, 2007
0Patent Application Number
110991980
Date Filed
April 4, 2005
0Patent Primary Examiner
Patent abstract
A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.
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