Patent attributes
A method for forming a metal filled semiconductor feature with improved structural stability including a semiconductor wafer having an anisotropically etched opening formed through a plurality of dielectric insulating layers revealing a first etching resistant layer overlying a conductive area; a plurality of dielectric insulating layers sequentially stacked to have alternating etching rates to a preferential etching process; subjecting the anisotropically etched opening to the preferential etching process whereby the sidewalls of the anisotropically etched opening are preferentially etched to produce etched dielectric insulating layers to form roughened sidewall surfaces; anisotropically etching through the etching resistant layer to reveal the conductive area; and, filling the anisotropically etched opening with a metal to form a metal filled semiconductor feature.
