US Patent 7244651 Fabrication of an OTP-EPROM having reduced leakage current

Patent 7244651 was granted and assigned to Texas Instruments on July, 2007 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Texas Instruments

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7244651

Date of Patent

July 17, 2007

Patent Application Number

10442524

Date Filed

May 21, 2003

Patent Primary Examiner

‌

Quoc Hoang

Patent abstract

The leakage current of an OTP-EPROM cell formed using buried channel PMOS technology can be reduced. The reduction in leakage current of the OTP-EPROM can be achieved by blocking implantation of the Vtp implant into a channel region of an n-well that substantially underlies a floating gate structure. The Vtp implant can be blocked by providing a mask overlying the surface of the channel region of the n-well during implantation of the Vtp implant.