Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Makoto Takizawa0
Date of Patent
June 26, 2007
0Patent Application Number
111410240
Date Filed
June 1, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor integrated circuit device includes a semiconductor region of a first conductivity type. A first insulated-gate field effect transistor having a source/drain region of a second conductivity type connected to an output terminal is formed on the semiconductor region. Further, a semiconductor region of a second conductivity type connected to the gate of the transistor is formed adjacent to the source/drain region of the transistor on the semiconductor region.
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