US Patent 7235443 Non-volatile memory and method of manufacturing floating gate

Patent 7235443 was granted and assigned to National Sun Yat-sen University on June, 2007 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

National Sun Yat-sen University

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

72354430

Patent Inventor Names

Tsung-Ming Tsai0

Ya-Hsiang Tai0

Chi-Wen Chen0

Shuo-Ting Yan0

Po-Tsun Liu0

Simon-M Sze0

Ting-Chang Chang0

Date of Patent

June 26, 2007

Patent Application Number

114617800

Date Filed

August 2, 2006

Patent Primary Examiner

‌

Trung Dang

Patent abstract

A method of manufacturing a floating gate is provided. The method includes the steps of forming a tunneling layer on a substrate, and forming a film layer containing a semiconductor component on the tunneling layer. The film layer consists of a semiconductor film or nano-dots.