Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 22, 2007
Patent Application Number
11047603
Date Filed
February 2, 2005
Patent Primary Examiner
Patent abstract
A pad oxide film and a silicon nitride film are formed on a semiconductor substrate. Next, after the patterning of the silicon nitride film, by etching the pad oxide film and the substrate, a first trench is formed in a first region and a second trench is formed in a second region. After that, by performing side etching of the pad oxide film of the first region while protecting the second region with a resist, a gap is formed between the substrate and the silicon nitride film. Subsequently, the inner surfaces of the first and second trenches are oxidized. At this time, a relatively large volume of oxidizing agent (oxygen) is supplied to a top edge portion of the first trench, and the curvature of the corner of the substrate increases.
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