Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ming Yang0
Yuli Lyanda-Geller0
Chia-Hung Yang0
Date of Patent
April 24, 2007
Patent Application Number
11307830
Date Filed
February 24, 2006
Patent Primary Examiner
Patent abstract
A transistor having a bottom dielectric layer, a first layer, a second layer, a top dielectric layer, and a gate electrode. The first layer and the second layer form a composite quantum well between the bottom dielectric layer and the top dielectric layer. The first layer, the second layer, and the top dielectric layer are configured to form a hole wire in the first layer. The gate electrode is over a portion of the hole wire and divides the top dielectric layer into a source contact and a drain contact.
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