US Patent 7205599 Devices having improved capacitance

Patent 7205599 was granted and assigned to Micron Technology on April, 2007 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Micron Technology

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

72055990

Patent Inventor Names

Karl M. Robinson0

Date of Patent

April 17, 2007

Patent Application Number

094702650

Date Filed

December 22, 1999

Patent Primary Examiner

‌

Thien F. Tran

Patent abstract

A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate.