Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
April 17, 2007
0Patent Application Number
107037690
Date Filed
November 7, 2003
0Patent Primary Examiner
Patent abstract
A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), and at least one of phosphorus (P) and boron (B). In an embodiment of the invention, forming the capping layer comprises exposing the conductive surface to an electroless capping solution comprising a cobalt source, a tungsten source, a rhenium source, and at least one of a phosphorus source and a boron source, and annealing the capping layer.
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