US Patent 7205196 Manufacturing process and structure of integrated circuit

The present invention provides a manufacturing process and the structure of an integrated circuit. In one embodiment, one polysilicon layer deposition and one polysilicon layer etching are used to form the gate of a trench device and the polysilicon layer of a planar device simultaneously. The present invention not only has overcome the problem of the electric leakage, but also has the advantages of withstanding a higher voltage, reducing the relevant cost and increasing the yields. The present invention possesses the outstanding technical features in the field of the power device.