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US Patent 7202149 Semiconductor device and manufacturing method thereof

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Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
72021491
Patent Inventor Names
Takashi Yokoshima1
Takuya Matsuo1
Tatsuya Arao1
Etsuko Asano1
Hidehito Kitakado1
Saishi Fujikawa1
Date of Patent
April 10, 2007
1
Patent Application Number
110103891
Date Filed
December 14, 2004
1
Patent Primary Examiner
‌
Asok Kumar Sarkar
1
Patent abstract

A semiconductor device of which manufacturing steps can be simplified by doping impurities at a time, and a manufacturing method thereof. The manufacturing method of the semiconductor device comprises the steps of: forming first and second semiconductor layers over a substrate, forming a first insulating film over the first and second semiconductor layers, forming first and second conductive films thereover, forming a first gate electrode having a stacked layer of the first and second conductive films, in which a portion of the first conductive film is exposed from the second conductive film, over the first semiconductor layer with the first insulating film interposed therebetween, forming a second insulating film over the first insulating film, forming third and fourth conductive films thereover, and forming a second gate electrode having a stacked layer of the third and fourth conductive films, in which a portion of the third conductive film is exposed from the fourth conductive film, over the second semiconductor layer with the first and second insulating films interposed therebetween.

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