US Patent 7200028 Ferroelectric memory device and its driving method

A ferroelectric memory device equipped with a plurality of memory cells and a control section that stores memory data indicated by a data signal when a write control signal changes from a first logical value to a second logical value, the ferroelectric memory device wherein, when the write control signal indicates the first logical value, the control section writes preliminary data in a first memory cell, and when the write control signal changes from the first logical value to the second logical value, the control section retains the preliminary data in the first memory cell, or writes the memory data in the first memory cell to store the memory data in the first memory cell.