US Patent 7199395 Photovoltaic cell and method of fabricating the same
Patent 7199395 was granted and assigned to Sanyo on April, 2007 by the United States Patent and Trademark Office.
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An i-type amorphous silicon film and an anti-reflection film made of amorphous silicon nitride or the like are formed in this order on a main surface of an n-type single-crystalline silicon substrate. On a back surface of the n-type single-crystalline silicon substrate are provided a positive electrode and a negative electrode next to each other. The positive electrode includes an i-type amorphous silicon film, a p-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate. The negative electrode includes an i-type amorphous silicon film, an n-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate.
US Patent 07199395 Photovoltaic cell and method of fabricating the same US Patent 7199395 Photovoltaic cell and method of fabricating the same
US Patent 07199395 Photovoltaic cell and method of fabricating the same
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