US Patent 7196020 Method for PECVD deposition of selected material films

Patent 7196020 was granted and assigned to Micron Technology on March, 2007 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Micron Technology

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

71960200

Patent Inventor Names

Gurtej S. Sandhu0

Sujit Sharan0

Date of Patent

March 27, 2007

Patent Application Number

098256130

Date Filed

April 3, 2001

Patent Primary Examiner

‌

Asok Kumar Sarkar

Patent abstract

A process for PECVD of selected material films on a substrate comprising the steps of placing a substrate in a PECVD chamber and maintaining the chamber under vacuum pressure while introducing a precursor gas, a reactant gas, and an ionization enhancer agent into the chamber. A plasma is generated from the gases within the chamber. The energy generating the plasma causes the formation of charged species. The resulting charged species of the ionization enhancer agent assists in the formation of chemically reactive species of at least the precursor.