US Patent 7190047 Transistors and methods for making the same
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Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.
US Patent 07190047 Transistors and methods for making the same US Patent 7190047 Transistors and methods for making the same
US Patent 07190047 Transistors and methods for making the same
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