Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tatsuya Arao0
Date of Patent
March 13, 2007
0Patent Application Number
106773160
Date Filed
October 3, 2003
0Patent Primary Examiner
Patent abstract
It is an object of the present invention to form a TFT which is required to have a high withstanding voltage characteristic as well as to lower an off-current, a TFT which is required to have a high withstanding voltage characteristic as well as to raise an on-current, and a TFT in which a short channel structure and the decline in the threshold voltage arising therefrom are attached importance to, on one and the same substrate. A TFT having gate insulating films with different thickness can be formed on one and the same substrate by providing auxiliary electrodes in addition to the gate electrodes over a semiconductor film as well as laminating the insulating films.
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