Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Omer H. Dokumaci0
Andres Bryant0
Edward J. Nowak0
Hussein I. Hanafi0
Date of Patent
March 6, 2007
0Patent Application Number
113655040
Date Filed
March 2, 2006
0Patent Primary Examiner
Patent abstract
A method of producing a backgated FinFET having different dielectric layer thickness on the front and back gate sides includes steps of introducing impurities into at least one side of a fin of a FinFET to enable formation of dielectric layers with different thicknesses. The impurity, which may be introduced by implantation, either enhances or retards dielectric formation.
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