Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sylvie Bruyere0
Francois Jacquet0
Philippe Candelier0
Richard Fournel0
Emmanuel Vincent0
Date of Patent
February 27, 2007
0Patent Application Number
107262630
Date Filed
December 2, 2003
0Patent Primary Examiner
Patent abstract
An SRAM memory cell includes first and second inverters (14, 16) interconnected between first and second data nodes. Each inverter is formed from complementary MOS transistors (18, 20, 18′, 20′) connected in series between a DC voltage supply source and a grounding circuit (22). A circuit (28, 30) programs the MOS transistors by causing an irreversible degradation of a gate oxide layer of at least some of the transistors (18, 18′).
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