Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mitsuaki Harada0
Takeo Kawase0
Soichi Moriya0
Date of Patent
February 20, 2007
0Patent Application Number
110499740
Date Filed
February 4, 2005
0Patent Primary Examiner
Patent abstract
A transistor having at least one of a source electrode and a drain electrode being formed of a porous film is described. The transistor maintains its characteristics even after being subjected to a high temperature and high humidity environment. The transistor may be used in a circuit board, a display and electronic equipment.
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