Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 20, 2007
Patent Application Number
10852891
Date Filed
May 25, 2004
Patent Primary Examiner
Patent abstract
A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed upon a gate dielectric layer deposited on at least a portion of the channel region of the transistor.
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