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US Patent 7175940 Method of two dimensional feature model calibration and optimization

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
71759401
Patent Inventor Names
Uwe Hollerbach1
Ralph Schlief1
Thomas Laidig1
Xuelong Shi1
Jang Fung Chen1
Kurt E. Wampler1
Date of Patent
February 13, 2007
1
Patent Application Number
102669221
Date Filed
October 9, 2002
1
Patent Citations Received
‌
US Patent 11996265 System and method for generating and analyzing roughness measurements and their use for process monitoring and control
2
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US Patent 11664188 Edge detection system
3
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US Patent 11664907 Periodic calibration for communication channels by drift tracking
4
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US Patent 11670480 System and method for generating and analyzing roughness measurements
5
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US Patent 11669124 Drift tracking feedback for communication channels
6
Patent Primary Examiner
‌
Thorl Chea
1
Patent abstract

A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.

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