US Patent 7170129 Non-volatile memory, fabrication method thereof and operation method thereof

A method of fabrication a non-volatile memory is provided. A stacked structure is formed on a substrate, the stacked structure including a gate dielectric layer and a control gate. Then, a first dielectric layer, a second dielectric layer and a third dielectric layer are respectively formed on the top and sidewalls of the stacked structure and the exposed substrate. Thereafter, a pair of charge storage layers are formed over the substrate to respectively cover a portion of the top and sidewalls of the stacked structure, and a gap exists between each of the charge storage layers.