Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 30, 2007
Patent Application Number
10040395
Date Filed
January 7, 2002
Patent Primary Examiner
Patent abstract
A varactor has a plurality of alternating P− wells and N+ regions formed in a silicon layer. Each of the P− wells forms a first N+/P− junction with the N+ region on one of its side and a second N+/P− junction with the N+ region on the other of its sides. A gate oxide is provided over each of the P− wells, and a gate silicon is provided over each of the gate oxides. The potential across the gate silicons and the N+ regions controls the capacitance of the varactor.
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