Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kenji Yoneda0
Date of Patent
January 16, 2007
0Patent Application Number
108724030
Date Filed
June 22, 2004
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a gate insulating film formed on a semiconductor substrate, and a gate electrode formed on the gate insulating film. Nitrogen is introduced into the gate insulating film, and the nitrogen concentration distribution thereof has a peak near the surface of the gate insulating film or near the center of the gate insulating film in the thickness direction. The peak value of nitrogen concentration in the gate insulating film is equal to or greater than 10 atm % and less than or equal to 40 atm %.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
