US Patent 7160800 Decreasing metal-silicide oxidation during wafer queue time

Patent 7160800 was granted and assigned to Taiwan Semiconductor Manufacturing Company on January, 2007 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7160800

Date of Patent

January 9, 2007

Patent Application Number

10905517

Date Filed

January 7, 2005

Patent Primary Examiner

‌

Kevin M. Picardat

Patent abstract

Disclosed herein are various embodiments of semiconductor devices and related methods of manufacturing a semiconductor device. In one embodiment, a method includes providing a semiconductor substrate and forming a metal silicide on the semiconductor substrate. In addition, the method includes treating an exposed surface of the metal silicide with a hydrogen/nitrogen-containing compound to form a treated layer on the exposed surface, where the composition of the treated layer hinders oxidation of the exposed surface. The method may then further include depositing a dielectric layer over the treated layer and the exposed surface of the metal silicide.