Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshinao Harada0
Date of Patent
January 2, 2007
0Patent Application Number
106027240
Date Filed
June 25, 2003
0Patent Primary Examiner
Patent abstract
A gate electrode is formed on a substrate via a gate insulating film. The gate insulating film includes a high dielectric constant film containing a metal, oxygen and hydrogen, and a lower barrier film formed below the high dielectric constant film and containing a metal, oxygen, silicon and nitrogen.
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